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Data Center News > Blog > Innovations > Scientists smash record in stacking semiconductor transistors for large-area electronics
Innovations

Scientists smash record in stacking semiconductor transistors for large-area electronics

Last updated: October 17, 2025 3:26 pm
Published October 17, 2025
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Scientists smash record in stacking semiconductor transistors for large-area electronics
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Credit score: CC0 Public Area

King Abdullah College of Science and Know-how (KAUST; Saudi Arabia) researchers have set a file in microchip design, attaining the primary six-stack hybrid CMOS (complementary metal-oxide semiconductor) for large-area electronics. With no different reported hybrid CMOS exceeding two stacks, the feat marks a brand new benchmark in integration density and effectivity, opening potentialities in digital miniaturization and efficiency.

A paper detailing the workforce’s analysis seems in Nature Electronics.

Amongst microchip applied sciences, CMOS microchips are present in almost all electronics, from telephones and televisions to satellites and medical units. In contrast with standard silicon chips, hybrid CMOS microchips maintain larger promise for large-area electronics. Digital miniaturization is essential for versatile electronics, sensible well being, and the Web of Issues, however present design approaches are reaching their limits.

“Traditionally, the semiconductor trade has targeted on lowering the dimensions of transistors to extend integration density. However we’re reaching a quantum mechanical restrict and the fee is skyrocketing,” mentioned KAUST Affiliate Professor Xiaohang Li, who led the research and runs the KAUST Superior Semiconductor Laboratory. “To proceed advancing, we should look past planar scaling; stacking transistors vertically is a promising answer.”

Microchip fabrication usually requires temperatures of a number of hundred levels Celsius, which may harm the underside layers of the chip as new ones are added. Within the KAUST course of, no fabrication step exceeded 150°C, and most steps had been accomplished at almost room temperature.

The floor of the layers should even be as easy as attainable. Modifications within the new design saved the surfaces smoother than earlier fabrication processes. For vertical stacking, the layers have to be aligned correctly for optimum connection. Right here, too, the scientists improved the fabrication.

See also  Record growth masks serious challenges

“In microchip design, it’s all about packing extra energy in much less house. By refining a number of steps within the fabrication, we offer a blueprint for scaling vertically and growing practical density far past right now’s limits,” mentioned postdoctoral researcher Saravanan Yuvaraja, first writer of the paper. KAUST Professor Martin Heeney and Adjunct Professor Thomas Anthopoulos additionally contributed to the research.

Extra info:
Three-Dimensional Built-in Hybrid Complementary Circuits for Massive-Space Electronics, Nature Electronics (2025). DOI: 10.1038/s41928-025-01469-0

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King Abdullah College of Science and Know-how


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TAGGED: electronics, largearea, record, Scientists, Semiconductor, Smash, stacking, transistors
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