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Data Center News > Blog > Global Market > Quinas readies UltraRam, flash memory with DRAM speed
Global Market

Quinas readies UltraRam, flash memory with DRAM speed

Last updated: September 8, 2025 9:38 am
Published September 8, 2025
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For starters, the reminiscence is constructed on what is named a” III-V expertise,” a category of semiconductor supplies which are composed of parts from teams III and V of the periodic desk, the corporate acknowledged. These supplies have distinctive properties that make them supreme to be used in digital units equivalent to transistors, LEDs, and photo voltaic cells.

Any expertise that’s not pure silicon causes hassle when constructed on a normal silicon CMOS logic course of.  This has been one of many main the reason why different makes an attempt at high-speed non-volatile reminiscence applied sciences like MRAM, ReRAM, PCM, and FRAM haven’t gotten off the bottom, Helpful stated.

Helpful notes the reminiscence’s voltage of two.6 volts Is orders of magnitude decrease than the 20 volts required by NAND flash reminiscence. That ought to translate into a lot decrease electrical payments and for much longer life for the storage techniques.

The information of profitable manufacturing is a crucial step as a result of it was the economies of scale that did in Optane, Helpful stated. “The wafer quantity by no means ramped excessive sufficient to drive down the prices.  There’s a chicken-and-egg downside that confronts any new expertise because it vies to switch a longtime market chief, which Optane tried to do with DRAM. The amount must get excessive sufficient to drive down the fee, and the value should be low sufficient to develop the market quantity.  Intel tried to subsidize the ramp lengthy sufficient to attain this, however gave up after dropping about $10 billion,” he stated.

See also  Grid 'digital twin’ could speed up data centre connections

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TAGGED: DRAM, Flash, memory, Quinas, readies, speed, UltraRam
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